2007 International Symposium On Power Semiconductor Devices Ics. 19th International Symposium on Power Semiconductor Devices and Ics A new lateral 800 V hybrid IGBT with a high-speed internal diode is proposed for switch-mode power supply SMPS applications. The 19th International Symposium on Power Semiconductor Devices and ICs.
Read all the papers in ISPSD 03. CFP13ISP-POD 978-1-4673-5133-1 2013 25th International Symposium on Power Semiconductor Devices. No00CH37094 IEEE Xplore.
Power SiP Novel Packaging Concepts Thermal Analysis Stress and Thermal Management.
Proceedings of The 18th International Symposium on Power Semiconductor Devices. Proceedings of the 19th International Symposium on Power Semiconductor Devices and ICs Year. Dec 2007. Title2007 International Symposium on Power Semiconductor Devices.